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| AP20T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50m 12.5A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 20 12.5 8 40 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Unit /W /W Data & specifications subject to change without notice 200107041 AP20T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 Max. Units 50 80 3 1 25 100 7 430 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A VGS=4.5V, ID=5A 6 4 1.5 2.3 6 30 10 3 270 70 50 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=10A VDS=24V VGS=4.5V VDS=15V ID=10A RG=3.3,VGS=10V RD=1.5 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 16 9 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time2 Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20T03GH/J 20 18 18 T C =25 C o 16 ID , Drain Current (A) 14 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 16 TC=150oC 14 10V 7.0V 5.0V 4.5V 12 12 10 10 8 8 6 6 4 4 V G =3.0V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 V G =3.0V 2 0 0 1 1 2 2 3 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 ID=5A T C =25 o C 65 1.5 I D =8A V G =10V Normalized R DS(ON) 1.3 RDS(ON)(m ) 55 1.0 45 0.8 35 3 5 7 9 11 0.5 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 10 8 2.0 6 Is (A) T j =150 o C 4 T j =25 o C VGS(th) (V) 1.5 1.0 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP20T03GH/J 14 f=1.0MHz 1000 I D = 10 A 12 VGS , Gate to Source Voltage (V) 10 V DS =15V V DS =20V V DS =24V C (pF) 100 Ciss 8 6 Coss Crss 4 2 0 10 0 3 6 9 12 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 100us 0.2 1 1ms 10ms 100ms 1s DC T c =25 C Single Pulse o 0.1 ID (A) 0.1 0.05 0.02 PDM t 0.01 0.1 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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